| 汪军,段力,刘一剑,苏言杰,沈勇,卢学良,张亚非.基于MgxZn1−xO薄膜固体装配型体声波谐振器[J].,2016,35(3):212-218 |
| 基于MgxZn1−xO薄膜固体装配型体声波谐振器 |
| Solidly mounted film bulk acoustic resonator based on MgxZn1−xO thin film |
| 投稿时间：2015-08-14 修订日期：2016-04-13 |
| 中文摘要: |
| 本文研制了一种基于磁控溅射掺镁氧化锌(MgxZn1-xO)压电薄膜的S波段固体装配型体声波谐振器(SMR-FBAR),相比传统的氧化锌(ZnO)薄膜,MgxZn1-xO具有高纵波声速,高电阻率,Mg原子以替位或填隙的方式进入晶格,保持ZnO的铅锌矿结构。通过磁控溅射条件优化,获得了c轴方向生长良好的MgxZn1-xO薄膜,并成功制得了串联谐振频率以及并联谐振频率分别在2.416GHz和2.456GHz的谐振器,测得其有效机电耦合系数为4.081%,回波损耗(S11)为23.89dB。这种SMR机械强度高、可靠性高、尺寸小,具有可立体集成到CMOS芯片表面的优势。 |
| 英文摘要: |
| With a high mechanical strength and a small size, solidly mounted film bulk acoustic resonator (FBAR) is more advantageous for the next generation S band wireless communication in integrated circuit technology. In this paper, an S-band FBAR consisting of a novel piezoelectric material MgxZn1-xO is presented. Compared to traditional ZnO, MgxZn1-xO has a higher acoustic velocity and resistance, and our result has shown that substituting Mg atoms in an interstitial way have not changed wurtzite structure of ZnO. By optimizing various growth conditions, we got a good c-axis oriented MgxZn1-xO film utilizing magnetron sputtering system, and we have fabricated an FBAR with a series and parallel resonant frequency of 2.416GHz and 2.456GHz respectively. The effective electromechanical coupling coefficient is 4.081% and a return loss is -23.98dB.S |
| DOI：10.11684/j.issn.1000-310X.2016.03.005 |
| 中文关键词: 掺镁氧化锌薄膜 固体装配型 薄膜体声波谐振器 S波段 集成电路 |
| 英文关键词: MgxZn1-xO solidly mounted resonator (SMR) film bulk acoustic resonator (FBAR) S band integrated circuit |
| 基金项目:国家科技项目(2011AA050504) |
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