Page 213 - 《应用声学》2024年第6期

第 43 卷 第 6 期 Vol. 43, No. 6
2024 年 11 月 Journal of Applied Acoustics November, 2024

⋄ 研究报告 ⋄

氮化镓高电子迁移率晶体管兆声电源波形优化设计

——栅源极桥臂串扰及漏源极振荡尖峰问题

刘建停 苏含玉 刘诗瑜 苏晨洋 赵夏冬 李喜峰 †

(上海大学 新型显示技术及应用集成教育部重点实验室 上海 200072)
摘要：针对氮化镓高电子迁移率晶体管 (GaN HMET) 在兆声清洗电源应用中由频率高导致的栅源极桥臂串
扰及漏源极振荡尖峰问题，首先对 GaN HEMT 产生桥臂串扰进行陈述，基于辅助电容法结合理论计算抑制了
桥臂串扰；并对漏源极产生高频振荡和尖峰的问题进行了分析，利用缓冲电路改善了此现象。协同解决栅源
极桥臂串扰和漏源极振荡尖峰问题，实验证明所设计的串扰抑制电路和缓冲电路可将栅源串扰电压从 +2.4 V
减小到 −1.6 V，串扰的振荡时间从 234 ns 缩小到 50 ns，漏源极电压尖峰从 142 V 降低到 90 V，振荡时间从
310 ns 缩短到 124 ns，电路开通损耗减小了 10.2%，关断损耗减小了 10.4%，关断延时减小了 14%，显著改善了
GaN HEMT 的工作波形。
关键词：兆声电源；GaN HEMT；桥臂串扰；尖峰振荡
中图法分类号: TN86 文献标识码: A 文章编号: 1000-310X(2024)06-1389-08
DOI: 10.11684/j.issn.1000-310X.2024.06.023

Waveform optimization design of GaN high electron mobility transistors

megasound power supply—The crosstalk of gate-source bridge arm and
drain-source oscillation peak

LIU Jianting SU Hanyu LIU Shiyu SU Chenyang ZHAO Xiadong LI Xifeng

(Key Laboratory of Advanced Display and System Applications Ministry of Education, Shanghai University,
Shanghai 200072, China)

Abstract: In response to the problem of gate source bridge arm crosstalk and drain source oscillation peak
caused by high frequency of GaN high electron mobility transistors (HMET) in megaacoustic cleaning power
supply, the cross-talk of GaN HEMT is described first in this paper. Based on the auxiliary capacitance method
combined with theoretical calculation, bridge arm crosstalk was suppressed. The problems of high-frequency
oscillation and spikes generated were analyzed by the drain source electrode, and a buffer circuit was used
to improve this phenomenon. Then the problem of crosstalk and drain-source oscillation peak was solved
cooperatively. The experiment demonstrates that the designed crosstalk suppression circuit and buffer circuit
can reduce the gate source crosstalk voltage from +2.4 V to −1.6 V, the crosstalk oscillation time is reduced
from 234 ns to 50 ns, the drain source voltage peak is reduced from 142 V to 90 V, the oscillation time is
shortened from 310 ns to 124 ns, the circuit opening loss is reduced by 10.2%, the turn off loss by 10.4%, and
the turn off delay by 14%, which significantly improves the working waveform of GaN HEMT.
Keywords: Megasonic power; GaN HMET; Crosstalk; Spiking oscillation
2023-07-24 收稿; 2023-10-14 定稿
作者简介: 刘建停 (1999– ), 男, 河南开封人, 硕士研究生, 研究方向: 超声焊接电源。
† 通信作者 E-mail: lixifeng@shu.edu.cn